KDF 603 System
Sputtering System
The KDF 603 III is a fully automated batch production system designed for :
- Fine line and high density circuit patterns
- Interconnect materials
- Inter layer dielectric materials
Our 603 utilizes Brooks automation Techware II computerized control to enhanced process flexibility to the proven design features of the 600 family. This third-generation sideways sputtering system is designed specifically to handle the demands of new production environments both in the semiconductor industry and in other fields requiring high-throughput, low-particulate thin film metallizations. The 603 III system continues the reputation of excellent reliability established by earlier 600 series systems.
Process flexibility
The 603 model III provides DC magnetron, RF magnetron and RF diode capability at all positions. RF etch capability is also included. System operation is under microprocessor control and features automatic cryo regeneration and automatic pump down. System provides bi-directional pallet scan rates up to 400 centimeters per minute. A wide variety of options add to the system's flexibility and include RF bias, DC bias and co-sputtering capabilities.
Loadlock
A special two-level loadlock accepts uncoated pallets on the first level and gives access to processed pallets on the second level. Venting, loading, unloading, and pump-down all occur while the wafers in the process chamber are being coated, thereby assuring efficient operation and high throughput.
Pallets
Standard pallets for MRC are stainless steel and are available in a variety of configurations depending on wafer size. Capacities range from thirty-six 2-inch wafers to two 200-mm wafers, ours is configured for 4 150-mm wafers. Custom pallets can be provided upon request.
Shutters
Specially designed stainless steel shutters protect adjacent targets from contamination during sputtering and keep optional heat lamps from being coated.
Vacuum System
High vacuum pump down is achieved with a 1,500 liter per second, closed-cycled helium cryogenic pump (CTI cryotorr 8). Temperature readout of the cryopump is displayed on the computer screen. Roughing of the main chamber and loadlock is performed by either a standard two-stage 51 cfm mechanical pump(leybold D65B) or an optional dry pump of your choice. An automatic pressure control system maintains constant pressure during sputtering and displays pressures on the CRT. A three gas mass flow ratio control is included on this unit.
Cathodes
The 603 Model III features sputter process capability at all three cathode positions, our 603 uses the 4 part inset MU cathodes, but A wide selection of cathodes is available to fit virtually any application. They include :
- INSET™ cathodes in CHI, UPSILON, MU (4-piece) and MU (1-piece) configurations,
- FOCEST™ cathodes for increased deposition efficiency for aluminium and aluminium alloys,
- Planar magnetron cathodes in standard, Mark II, and Magterial™ (for magnetic materials) configurations,
- Planar diode cathodes for use in the Rf mode.
RF Etch Platform
RF sputter etching is performed on a pneumatically operated, water-cooled etch platform that moves horizontally to automatically remove the pallet from, then restore the pallet to the pallet carrier.
Radiant Heater
Substrate heating is accomplished by quartz lamps that are reflector mounted on the chamber front plate at the etch station. Lamps are protected during etch by a movable shutter.
RF Generator
The 1.25 kW RF generator (Advanced Energy RFXII) has been specifically designed for sputtering applications. It is continuously rated, operates on the ISM frequency of 13.56 MHz and meets or exceeds all FCC and OSHA specifications as well as those of the West German Post Office. A 5 kW power supply is optional.
RF Auto tuning
An independent RF auto tuning network provides feedback control to maintain minimum reflected power for all RF modes of operation.
DC Magnetron Power Supply
Power for magnetron sputtering is provided by a three-phase 10 kW DC power supply (Advanced Energy MDX 10). This supply is adjustable to 850V or 30 amps, not to exceed 10 kW. The supply is power feedback controlled and current limited.
DC Bias
A DC power supply is included for DC biasing of substrates over the range of 0 to 150 V.
System Dimensions
The 603 Model III is compactly designed to fit easily into any production environment. It measures 82" (208 cm) high x 61" (155 cm) deep (minimum) or 83" deep (maximum) x 78" (198 cm) wide. The Electronics tower is 72" high x 26" deep x 22" wide.
Utility Requirements
The following utility requirements are typical. They may vary with addition of certain options. Our unit has the following requirements in it's current configuration:
- Power : 208 V, 3 phase 50/60 Hz, 5-wire wye.
- Water : 4GPM, up to 90 PSIG max., 65-75¡F (18-24¡C).
- Resistivity : 4 k ohm-cm minimum.
- Air : 100 PSIG filtered. 3 CFM intermittent.
- Sputtering Gas : typically 5 PSIG Argon, 50 to 150 sccm.
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